Abstract
Cu2S/Si heterojunctions have been fabricated by chemically depositing Cu2S thin films on n-type CSi substrates. Films grown on glass slides side by side had a thickness of 0.5 microns, resistivity of 2 × 10−1 ohm cm and optical band gap of 1.9 eV. Ohmic back contact was made by electroless technique. (https://www.wmpg.org) The front grid was a spring-loaded metal mesh. Junction characteristics were measured on as-grown and air-annealed samples in dark and under illumination of 80 mW/cm2. Annealing at 200°C showed substantial improvement on the junction characteristics. Typical values obtained on annealing are Jsc 110 μA/cm2, Voc 120 mV and F.F. = 0.36. Suggestions for further improvement are also mentioned.
Solar & Wind Technology 12/1990; 7(5):619-621. DOI:10.1016/0741-983X(90)90073-B
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