We achieved the deposition of highly crystalline zinc oxide thin films by aqueous chemical growth process at 95 o C. The precursor solution used in the deposition include Zn(NO 3) 2 .6H 2 O and C 6 H 12 N 4 . Two different samples were grown on glass substrates at 5 hours and 12 hours deposition time. These were characterized by means of x-ray diffraction, scanning electron microscope, and spectrophotometer at normal incidence of light. X-ray diffraction results show that highly crystalline ZnO thin film can be achieved at a longer deposition time. Besides, the increase in the deposition time leads to a red shift in the band gap energy of the films.
Digest Journal of Nanomaterials and Biostructures 01/2011; 6(3):1301-1310.