A solution growth technique for preparation of CuxS thin films is described. Using ethylenediaminetetraacetic acid as complexing agent, films are deposited from solutions containing Cu+ complex ions and thiourea in a basic medium. Stoichiometry of the material lies in the range 1.83 < x < 1.85. Optical absorption spectra indicate a band gap of 1.45 eV for these films. Film thickness as a function of deposition time and terminal thickness as a function of pH of solution are investigated. Effect of bath temperature on the deposition rate is discussed. Good quality films with thickness 3–5 microns are obtained at pH 10.
Solar Energy Materials 12/1989; 19(6-19):415-420. DOI:10.1016/0165-1633(89)90036-1