Thin films of Co3S4 have been prepared by the chemical-bath deposition process using cobalt(II) chloride and thiourea as the starting materials and NH3(aq) as the complexing agent. Energy-dispersive X-ray fluorescence analysis indicates values of the Co/S atomic ratio different from the ideal value of 0.75. X-ray diffraction reveals that the films are crystalline. The influence of various preparation conditions, such as bath composition, method of film formation and heat treatment, on the properties of the films has been studied. The bath parameters such as concentration and bath temperature greatly affect the morphology, thickness, refractive index and electrical resistivity of the deposited films. The optimum concentration of the bath for producing good-quality films has been determined. Some reaction chemistry is discussed.
Materials Chemistry and Physics 01/1997; 47(1):31-36. DOI:10.1016/S0254-0584(97)80024-7