Chemical bath deposition of Cu<SUB align=right>2S and Ag<SUB align=right>2S thin films has been carried out. Cu<SUB align=right>2 films were deposited using triethanolamine and ethylenediaminetetraacetic acid as complexing agents. Band gap, resistivity and thickness measurements were made on these samples, and their characteristics compared and evaluated in respect of their possible use in photovoltaic and architectural applications. Similar studies are made on Ag<SUB align=right>2S films prepared using sodium thiosolthate as a complexing agent. Details of the deposition procedures are presented.
International Journal of Materials and Product Technology 10/1990; 5(3):264-272. DOI:10.1504/IJMPT.1990.036620